tisp5xxxh3bj overvoltage protector series tisp5070h3bj thru tisp5190h3bj forward-conducting unidirectional thyristor overvoltage protectors smb package (top view) description analogue line card and isdn protection - analogue slic - isdn u interface - isdn power supply 8 kv 10/700, 200 a 5/310 itu-t k.20/21/45 rating ion-implanted breakdown region - precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes device symbol these devices are designed to limit overvoltages on the telephone and data lines. overvoltages are normally caused by a.c. powe r system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protecti on and is typically used for the protection of isdn power supply feeds. two devices, one for the ring output and the other for the tip ou tput, will provide protection for single supply analogue slics. a combination of three devices will give a low capacitance protector network for t he 3-point protection of isdn lines. the protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. negative overvoltages are i nitially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on sta te. this low- voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar h olding current prevents d.c. latchup as the diverted current subsides. positive overvoltages are limited by the conduction of the anti-paralle l diode. .............................................. ul recognized component device name v drm v v (bo) v tisp5070h3bj -58 -70 tisp5080h3bj -65 -80 tisp5095h3bj -75 -95 TISP5110H3BJ -80 -110 tisp5115h3bj -90 -115 tisp5150h3bj -120 -150 tisp5190h3bj -160 -190 wave shape standard i ppsm a 2/10 gr-1089-core 500 8/20 ansi c62.41 300 10/160 tia-968-a 250 10/700 itu-t k.20/21/45 200 10/560 tia-968-a 160 10/1000 gr-1089-core 100 md5ufcab 12 k a sd5xad k a how to order device package carrier tisp5xxxh3bj bj (j-bend do-214aa/smb) embossed tape reeled tisp5xxxh3bjr tisp5xxxh3bj 5xxxh3 3000 r-s insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150. for standard termination finish order as for lead free termination finish order as marking code std. quantity product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absolute maximum ratings, t a = 25 c (unless otherwise noted) electrical characteristics, t a = 25 c (unless otherwise noted) tisp5xxxh3bj overvoltage protection series rating symbol value unit repetitive peak off-state voltage (see note 1) '5070h3bj '5080h3bj '5095h3bj '5110h3bj '5115h3bj '5150h3bj '5190h3bj v drm -58 -65 -75 -80 -90 -120 -160 v non-repetitive peak impulse current (see notes 2, 3 and 4) i ppsm 500 300 250 220 200 200 200 160 100 a 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, 1.2/50 s voltage, 8/20 s current combination wave generator) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 5/200 s (vde 0433, 10/700 s voltage waveshape) 0.2/310 s (i3124, 0.5/700 s waveshape) 5/310 s (itu-t k.44, 10/700 s voltage waveshape used in k.20/21/45) 5/310 s (ftz r12, 10/700 s voltage waveshape) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) non-repetitive peak on-state current (see notes 2, 3 and 5) i tsm 55 60 2.1 a 20 ms, 50 hz (full sine wave) 16.7 ms, 60 hz (full sine wave) 1000 s 50 hz/60 hz a.c. initial rate of rise of on-state current, gr-1089-core 2/10 s wave shape di t /dt 400 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. see figure 9 for voltage values at lower temperatures. 2. initially the device must be in thermal equilibrium with t j = 25 c. 3. the surge may be repeated after the device returns to its initial conditions. 4. see figure 10 for current ratings at other temperatures. 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. derate current values at -0.61 %/ c fo r ambient temperatures above 25 c. see figure 8 for current ratings at other durations. parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm t a = 25 c t a = 85 c -5 -10 a v (bo) breakover voltage dv/dt = -250 v/ms, r source = 300 ? '5070h3bj '5080h3bj '5095h3bj '5110h3bj '5115h3bj '5150h3bj '5190h3bj -70 -80 -95 -110 -115 -150 -190 v v (bo) impulse breakover voltage dv/dt -1000 v/ s, linear voltage ramp, maximum ramp value = -500 v di/dt = -20 a/ s, linear current ramp, maximum ramp value = -10 a '5070h3bj '5080h3bj '5095h3bj '5110h3bj '5115h3bj '5150h3bj '5190h3bj -80 -90 -105 -120 -125 -160 -200 v product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
isdn device selection the etsi technical report etr 080:1993 defines several range values in terms of maximum and minimum isdn feeding voltages. the following table shows that ranges 1 and 2 can use a TISP5110H3BJ protector and ranges 3 to 5 can use a tisp5150h3bj protector. impulse testing to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various imp ulse wave forms. the table below shows some common values. if the impulse generator current exceeds the protector s current rating then a series resistance can be used to reduce the curr ent to the protector s rated value and so prevent possible failure. the required value of series resistance for a given waveform is given by the following calculations. first, the minimum total circuit impedance is found by dividing the impulse generator s peak voltage by the prote ctor s rated current. the impulse generator s fictive impedance (generator s peak voltage divided by peak short circuit current) is then sub tracted from the minimum total circuit impedance to give the required value of series resistance. in some cases the equipment will require verif ication over a temperature range. by using the rated waveform values from figure 10, the appropriate series resistor value can be calculated f or ambient temperatures in the range of -40 c to 85 c. if the devices are used in a star-connection, then the ground return protector, th3 in figure 13, will conduct the combined cur r ent of protectors th1 and th2. similarly in the bridge connection (figure 14), the protector th1 must be rated for the sum of the conductor curre nts. in these cases, it may be necessary to include some series resistance in the conductor feed to reduce the impulse current to within the protector s ratings. tisp5xxxh3bj overvoltage protection series a pplications information range feeding voltage standoff voltage v drm v device name minimum v maximum v 15 16 9- 75 tisp5095h3bj 26 67 0 -80 TISP5110H3BJ 391 99 -120 tisp5150h3bj 490 110 5 105 115 standard peak voltage setting v volt age waveshape s peak current value a current waveshape s tisp5xxxh3bj 25 c rating a series resistance ? gr-1089-core 2500 2/10 500 2/10 500 0 1000 10/1000 100 10/1000 100 tia-968-a 1500 10/160 200 10/160 250 0 80 0 10/560 100 10/560 160 0 1500 9/720 ? 37.5 5/320 ? 200 0 1000 9/720 ? 25 5/320 ? 200 0 i3124 1500 0.5/700 37.5 0.2/310 200 0 itu-t k.20/21/45 1500 4000 6000 10/700 37.5 100 150 5/310 200 0 ? tia-968-a terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generator. product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
